Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs
نویسندگان
چکیده
The shift of the threshold voltage Vth in Al2O3/InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) is demonstrated by CF4 plasma treatments. The accompanying channel mobility degradation is monitored to understand the tradeoff design space. The effective negative charge introduced by the F plasma treatments at the oxide interface is found to be as high as %0.73 ' 1013 cm%2 (mobility > 500 cm2V%1 s%1), sufficient to fully compensate for the net polarization charge in Al0.15GaN/GaN HEMTs. Although it is difficult to obtain Vth C 0V owing to the high polarization charges in InAlN, these MOSHEMTs with 1μm gates show very low leakage (>1 ' 10%11 A/mm), low hysteresis, and low dispersion. © 2014 The Japan Society of Applied Physics
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